THE GATED-ACCESS MNOS MEMORY TRANSISTORWEGENER HAR.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 266-276; BIBL. 9 REF.Article

SPEICHEREINGENSCHAFTEN VON MNOS-TRANSISTOREN. = LES PROPRIETES DE MEMOIRE DES TRANSISTORS MNOSKIRSCHNER N.1976; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1976; VOL. 5; NO 4; PP. 179-182; BIBL. 17 REF.Article

SOME CHARACTERISTICS OF NONVOLATILE CDSE THIN-FILM MEMORY TRANSISTORS.YU KK.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 591-593; BIBL. 8 REF.Article

THEORY OF MNOS MEMORY TRANSISTOR.CHANG JJ.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 511-518; BIBL. 21 REF.Article

THE EFFECTS OF HCL RESIDUAL TREATMENT ON MNOS MEMORY TRANSISTORS.MCLOUSKI RM; PECKERAR MC; SCHREURS JJ et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 6; PP. 985-988; BIBL. 10 REF.Article

CHARGE PUMPING MEASUREMENTS ON STEPPED-GATE METAL-NITRIDE-OXIDE-SILICON MEMORY TRANSISTORSMAES HE; USMANI H.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7106-7108; BIBL. 7 REF.Article

FATIGUE PHENOMENA OF FTMIS MEMORY TRANSISTORS.HORIUCHI M; ITOH Y.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 587-590; BIBL. 16 REF.Article

CHARGE TRANSFER BY DIRECT TUNNELING IN THIN-OXIDE MEMORY TRANSISTORS.FERRIS PRABHU AV.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 524-530; BIBL. 27 REF.Article

ENDURANCE OF THIN-OXIDE NONVOLATILE MNOS MEMORY TRANSISTORS.WHITE MH; DZIMIANSKI JW; PECKERAR MC et al.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 577-580; BIBL. 9 REF.Article

EINSATZ DES P-KANAL-FLOATING-GATE-TRANSISTORS IN PROGRAMMIER- UND UV-IOESCHBAREN FESTWERTSPEICHERN = EMPLOI DU TRANSISTOR A CANAL P ET GRILLE FLOTTANTE DANS DES MEMOIRES MORTES PROGRAMMABLES ET A EFFACEMENT PAR L'ULTRAVIOLETUHLMANN H; SCHNEEGAB G.1982; NACHRICHTENTECH., ELEKTRON.; ISSN 0323-4657; DDR; DA. 1982; VOL. 32; NO 6; PP. 226-231; BIBL. 12 REF.Article

OBSERVATIONS OF ELECTRON AND HOLE TRANSPORT THROUGH THIN SIO₂ FILMSHSU ST.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 3; PP. 434-440; BIBL. 6 REF.Article

A 256 BIT NONVOLATILE STATIC RANDOM ACCESS MEMORY WITH MNOS MEMORY TRANSISTORS.SAITO S; ENDO N; UCHIDA Y et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 185-190; BIBL. 3 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

INFLUENCE OF A HIGH-TEMPERATURE HYDROGEN ANNEAL ON THE MEMORY CHARACTERISTICS OF P-CHANNEL MNOS TRANSISTORSMAES HE; HEYNS GL.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2706-2713; BIBL. 28 REF.Article

GA AS MAOSFET MEMORY TRANSISTOR.BAYRAKTAROGLU B; COLQUHOUN A; HARTNAGEL HL et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 19-21; BIBL. 4 REF.Article

AN ACCURATE MODEL FOR A DEPLETION MODE IGFET USED AS O LOAD DEVICEMOHAN RAO GR.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 5; PP. 711-714; BIBL. 15 REF.Article

EMPIRICAL STUDY OF THE METAL-NITRIDE-OXIDE-SEMICONDUCTOR DEVICE CHARACTERISTICS DEDUCED FROM A MICROSCOPIC MODEL OF MEMORY TRAPSNGAI KL; HSIA Y.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 2; PP. 159-161; BIBL. 15 REF.Article

ANALYSIS OF STORED CHARGE VOLATILITY AN MAOS MEMORY ELEMENTANAND KV; SAMPURAN SINGH.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 48; NO 3; PP. 361-366; BIBL. 6 REF.Article

SUR L'INTERACTION D'UNE JONCTION P.N ET D'UNE LIMITE DE SEPARATION CHARGEE OXYDE-NITRURE DANS UN TRANSISTOR MNOS A EFFET DE MEMOIREKROLEVETS KM; PETIN YU A; BEREZHNOJ VN et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 4; PP. 367-369; BIBL. 2 REF.Article

MOS DEVICES.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; SUPPL. 1; PP. 27-54; BIBL. DISSEM.; (CONF. SOLID STATE DEVICES. 9. PROC.; TOKYO; 1977)Conference Paper

CARACTERISATION DU TRANSISTOR MEMOIRE M.N.O.S. PAR MESURE DE BRUIT: ETUDE DU VIEILLISSEMENTCHAUSSE SERGE.1979; ; FRA; DA. 1979; VIII-100 P.: ILL.; 30 CM; BIBL. 51 REF.; TH. 3EME CYCLE: SCI./GRENOBLE, I.N.P./1979Thesis

EFFECTS OF NITRIDE DEPOSITION CONDITIONS ON CHARACTERISTICS OF AN MNOS NONVOLATILE MEMORY TRANSISTORNAKAYAMA H; ENOMOTO K.1979; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1979; VOL. 18; NO 9; PP. 1773-1779; BIBL. 12 REF.Article

DUL-ELECTRON-INJECTOR-STRUCTURE ELECTRICALLY ALTERABLE READ-ONLY-MEMORY MODELING STUDIESDIMARIA DJ; DEMEYER KM; DONG DW et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1047-1053; BIBL. 19 REF.Article

Operation principle and development trend of transistor-type ferroelectric memoriesTOKUMITSU, Eisuke; ISHIWARA, Hiroshi.Hyomen gijutsu. 2000, Vol 51, Num 7, pp 669-675, issn 0915-1869Article

0.75 V micro-power SI memory cell with feedthrough error reductionSAWIGUN, C; SERDIJN, W. A.Electronics Letters. 2008, Vol 44, Num 9, pp 561-562, issn 0013-5194, 2 p.Article

Effect of temperature on data retention of silicon-oxide-nitride-oxide-semiconductor nonvolatile memory transistorsMILLER, S. L; MCWHORTER, P. J; DELLIN, T. A et al.Journal of applied physics. 1990, Vol 67, Num 11, pp 7115-7124, issn 0021-8979Article